bat54-02v document number 85633 rev. 1.4, 05-aug-10 vishay semiconductors www.vishay.com 1 1 8 554 1 2 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal schottky diode features ? this diode features very low turn-on voltage and fast switching ? this device is protected by a pn junction guard ring against excessive voltage, such as electrostatic discharges ? space saving sod-523 package ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: sod-523 weight: approx. 1.6 mg molding compound flammability rating: ul 94 v-0 terminals: high temperature soldering guaranteed: 260 c/4 x 10 s at terminals packaging codes/options: gs18/10k per 13" reel (8 mm tape), 10k/box gs08/3k per 7" reel (8 mm tape), 15k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part ordering code type marking remarks bat54-02v BAT54-02V-GS18 or bat54-02v-gs08 v tape and reel parameter test condition symbol value unit repetitive peak reverse voltage = working peak reverse voltage v rrm 30 v forward continuous current i f 200 ma repetitive peak forward current i frm 300 ma surge forward current i fsm 600 ma power dissipation p tot 230 mw
www.vishay.com 2 document number 85633 rev. 1.4, 05-aug-10 bat54-02v vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com thermal characteristics t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit junction soldering point r thjs 100 k/w junction temperature t j 125 c storage temperature range t stg - 65 to + 150 c parameter test condition symbol min. ty p. max. unit reverse breakdown voltage 100 a pulses v (br) 30 v leakage current pulse test t p < 300 s, < 2 % at v r = 25 v 2a forward voltage i f = 0.1 ma, t p < 300 s, < 2 % v f 240 mv i f = 1 ma, t p < 300 s, < 2 % v f 320 mv i f = 10 ma, t p < 300 s, < 2 % v f 400 mv i f = 30 ma, t p < 300 s, < 2 % v f 500 mv i f = 100 ma, t p < 300 s, < 2 % v f 800 mv diode capacitance v r = 1 v, f = 1 mhz c d 10 pf reverse recovery time i f = 10 ma , i r = 10 ma to i r = 1 ma, r l = 100 t rr 5ns figure 1. typical forwar d voltage forward current vs. various temperatures figure 2. typical variation of reverse current vs. various temperatures 1 88 67 1000 100 10 1 0.1 0.01 i - for w ard c u rrent (ma) f 0 0.4 0.6 1.2 1.4 0. 8 1 0.2 v f - for w ard v oltage ( v ) = 125 c t j 25 c - 40 c 100 1000 10 1 0.1 0.01 5101520 02530 v r - re v erse v oltage ( v ) i - re v erse c u rrent ( a) r 1 88 69 = 125 c t j 100 c 75 c 50 c 25 c figure 3. typical capacitance c vs. reverse applied voltage v r 1 88 6 8 10 14 12 2 4 0 0 4 12 16 20 24 2 8 c - typical capacitance (pf) d v r - re v erse v oltage ( v ) 6 8 8
bat54-02v document number 85633 rev. 1.4, 05-aug-10 vishay semiconductors www.vishay.com 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeters (inches): sod-523 foot print recommendation: rev. g - date: 13.april 2010 16864 document no.: s8-v-3880.02-001 (4) 0.4 (0.016) 1.45 (0.057) 0.35 (0.014) 1.3 (0.051) 1.1 (0.043) 0.35 (0.014) 0.18 (0.007) 1.7 (0.067) 1.5 (0.059) 0.2 (0.008) 0.08 (0.003) 0.9 (0.035) 0.7 (0.028) 0.7 (0.028) 0.5 (0.020) max. 0.8
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